1. Interface roughness scattering in type II band offset GaInAsSb/InAs single heterostructures.
- Author
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Mikhailova, M. P., Moiseev, K. D., Voronina, T. I., Lagunova, T. S., and Yakovlev, Yu. P.
- Subjects
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HETEROSTRUCTURES , *GALLIUM compounds , *INDIUM arsenide , *SCATTERING (Physics) , *QUANTUM wells , *INTERFACES (Physical sciences) , *PHOTOLUMINESCENCE - Abstract
We present experimental study of the influence study of the influence roughness (IFR) scattering on mobility in the type II band offset p-GaInAsSb/p-InAs heterostructures with self-consistent quantum wells and 2D-electron channel at the interface. It was shown that IFR scattering dominates carrier mobility. Low-temperature mobility decreases as μ∼d2 by increasing acceptor (Zn) doping level of quaternary layer. Parameters of IFR scattering, the height Δ=12 Å and correlation length Λ=100 Å were evaluated from technological and photoluminescence data. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]
- Published
- 2007
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