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As the important electric loss of a graphene resonator, intrinsic current loss has received increasing attention, but the existing research is limited to qualitative analysis and approximate calculation. Based on the microscopic behavior of carriers, we have accurately established the calculation model of induced current loss, which is in good agreement with the existing experimental results. Compared with the previous models, the model in this work can not only fit the inverse V-shaped Q − Vdc curve well but also be compatible with the V-shaped Q − Vdc curve, which is beyond the reach of the previous models. In addition, the calculation results show that selecting the appropriate gate voltage combination when stimulating the graphene resonator can increase the quality factor by nearly 1–2 orders of magnitude. Furthermore, we reasonably explain the importance of DC gate voltage applied in the experiment compared with the case of non-DC gate voltage. This work realizes the accurate calculation of intrinsic current loss and is of great significance for reducing the intrinsic current loss in the practical application of graphene resonators. [ABSTRACT FROM AUTHOR]

Semiconducting molybdenum disulfide (MoS2) has drawn a lot of attention for its exceptional electronic and optoelectronic properties. Despite the potential advantages, the large contact resistance at the metal–MoS2 interfaces has been one of the biggest obstacles for the realization of ideal MoS2 transistors. One solution to improve the metal–MoS2 interfaces is to use the graphene electrodes. Here, we provide a selective etching method for fabricating graphene-contacted MoS2 transistors. It has been proved that the graphene could be totally etched with Ar+ plasma treatment, and the multilayer MoS2 flake can also be reduced layer by layer with Ar+ plasma treatment. By etching graphene selectively in graphene–MoS2 heterostructures, one can obtain graphene-contacted MoS2 transistors successfully. The transistor reported in this paper shows an on–off ratio about 106 and a carrier mobility about 42 cm2 V−1 s−1. This selective etching method would be beneficial for some other graphene-contacted electronic devices. [ABSTRACT FROM AUTHOR]

Graphene photodetectors are highly attractive owing to its ultra-fast and wide-range spectral response from visible to infrared benefit from the superior carrier mobility and the linear dispersion with zero bandgap of graphene. The application of graphene photodetectors however is seriously limited by the low intrinsic responsivity in the order of ∼10 mA/W. Here, we demonstrate photogating field-effect transistors based on pure monolayer graphene with simple device structures. The light absorption in the heavily n-doped silicon/silicon oxide (Si/SiO2) substrate generates an additional photovoltage that effectively modulates the conductance of graphene, leading to room temperature graphene photodetectors with high responsivity of ∼500 A/W for 450 nm light and ∼4 A/W for 1064 nm light, respectively. The generated photocurrent changes with applied gate voltage and shows a strongly nonlinear power dependence. Meanwhile, the photoresponse of graphene exhibits a cut-off wavelength of ∼1100 nm, confirming the dominance photogating effect caused by light absorption in Si/SiO2 substrate. Considering the great compatibility of graphene to Si technology, our result paves a way for high-performance chip-integrated photodetectors. [ABSTRACT FROM AUTHOR]