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Due to the structural and functional flexibility and complexity of ferroelectrics, the fundamental science and applications of this material family is continuously evolving. This reference text covers the most significant advances in the field of ferroelectrics over the past decade. The fundamental aspects describe studies based on first-principles calculations, multiscale simulation and ferroelectric models adapted from ferromagnetic counterparts. The experimental aspects describe advanced ferroelectric ceramics made from band-gap-engineered compositions pioneered in emerging multi-sensing and energy harvesting applications, topological defects in ferroelectrics for nanoelectronics, and the emergence of ferroelectricity in halide perovskites. The book links fundamental science to experiments and applications, which is urgently needed by ferroelectrics researchers who must gain knowledge in both aspects. Readers will uncover the latest verified research results and conclusions reached by well-known, pioneering and leading scientists in each of the topics.Key Features Covers the most significant new developments in ferroelectrics research, including fundamental studies and emerging applicationsLinks fundamental aspects such as modelling with practical aspects such as microstructure and applications, providing a holistic view that is increasingly needed as ferroelectrics research moves towards simulation-guided experimental validationsIncludes case studies, worked examples and end-of-chapter summariesDiscusses applications including the use of ferroelectric materials in multi-sensing and energy harvesting applications, nanoelectronics, advanced electronics and halide perovskites

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face