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This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts.The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET.This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.

This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters technology chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications discussed include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc.

The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design.

This book provides a detailed analysis of all aspects of capacitive DC-DC converter design: topology selection, control loop design and noise mitigation. Readers will benefit from the authors'systematic overview that starts from the ground up, in-depth circuit analysis and a thorough review of recently proposed techniques and design methodologies. Not only design techniques are discussed, but also implementation in CMOS is shown, by pinpointing the technological opportunities of CMOS and demonstrating the implementation based on four state-of-the-art prototypes.

This is the second of a two-volume work covering the electrical principles syllabuses of all of the major examining bodies including the City & Guilds of London Institute's electrical craft courses. It is also suitable for a wide range of other courses, including the first three years of the BTEC electrical series. Great care has been taken to ensure that the text fully covers the content of the syllabuses concerned, both as published and as interpreted by the examiners in the past.

Includes index.