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Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories.Across nine chapters, it covers:• SiC and IV-IV semiconductors,• III-GaN and nitride semiconductors,• III-V and II-VI semiconductors,• ZnO-based and GaO-based semiconducting oxides,• Graphene, ferroelectric oxides, and other emerging materials,• Wide-bandgap semiconductors of SiC, GaN, and ZnO, and• Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene.Key achievements from the author and collaborators in the above fields are referred to and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy.Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei; establishing the Science Exploring Lab; joining Kennesaw State University as an adjunct professor, part-time; and at the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. Currently, he is focusing on materials research for LED, III-nitrides, SiC, ZnO, other semiconductors/oxides, and nanostructures and has devoted time to materials research and growth of III-V and II-VI compounds, LED, III nitrides, SiC, ZnO, GaO, and other semiconductors/oxides.Professor Feng has also edited and published multiple review books in his field, alongside authoring scientific journal papers and conference/proceeding papers. He has organized symposiums and been an invited speaker at different international conferences and universities. He has also served as a guest editor for special journal issues.

This book describes all optical properties of wooden materials, including definitions and measurement methods of optical parameters such as absorbance, diffuse and specular reflectance, colour and gloss. Basic knowledge regarding the reflectance measurement in the ultraviolet, visible, near- and middle infrared radiation ranges is also discussed. It examines conducting correct optical measurements, as well as introduces the validity limits of the individual methods. Steaming as an environmental-friendly colour modification process is introduced by the description of the steaming properties of eight species. Steaming schedules for wood-working industry are suggested to create optimum colour modification. Natural and artificial aspects of photodegradation are monitored by studying the colour change and using infrared reflectance spectrum measurement. The effect of influencing parameters such as temperature, relative air humidity and leaching effect of rain is also discussed. Combinedeffects of heat and light on the optical properties of wood in all possible combinations are presented. The book helps wood researchers and Ph.D. students perform correct and repeatable optical measurements and evaluations in order to draw the right conclusions.

In recent years, optical properties of the unique atomic and molecular structures of materials have drawn great scientific interest. Linear optical properties of materials such as metals, metal oxides, magnetic oxides, and organic materials are based on energy transfer and find applications in wastewater treatment, forensic science, biomedical science, photovoltaics, nuclear technology, and LED displays. Nonlinear optical properties of materials are based on the nonlinear medium and find more advanced applications in frequency mixing generations and optical parametric oscillations. This book presents the underlying principles, implementation, and applications of the linear and nonlinear optical properties of materials and has been divided into two parts emphasizing these properties. The first part of the book, Linear Optics, discusses bimetallic nanoparticles in dielectric media and their integration to dye molecules to detect trace amounts of heavy metals at the nanometer level, as well as to enhance luminescence and image contrasts in forensic inspection and biomedical diagnosis. It shows how the integration of bimetallic nanoparticles into a ZnO matrix promotes broadening of the absorption spectrum from the ultraviolet to the visible wavelength. It explains the role of surface adsorption and photocatalytic degradation in dye-removal kinetics by Fe3O4 magnetic nanoparticles under pulsed white light. It also discusses the double-layer shielding tank design to safely store radioactive waste and photon propagation through the multilayer structures of a human tissue model. The second part of the book, Nonlinear Optics, presents general concepts such as electromagnetic theory, nonlinear medium, and wave propagation, as well as more advanced concepts such as second harmonic generation, phase matching, optical parametric interactions, different frequency generation, sum frequency generation, tunable laser, and optical resonant oscillator.

This book covers the optical and electrical properties of nanoscale materials with an emphasis on how new and unique material properties result from the special nature of their electronic band structure. Beginning with a review of the optical and solid state physics needed for understanding optical and electrical properties, the book then introduces the electronic band structure of solids and discusses the effect of spin orbit coupling on the valence band, which is critical for understanding the optical properties of most nanoscale materials. Excitonic effects and excitons are also presented along with their effect on optical absorption.2D materials, such as graphene and transition metal dichalcogenides, are host to unique electrical properties resulting from the electronic band structure. This book devotes significant attention to the optical and electrical properties of 2D and topological materials with an emphasis on optical measurements, electrical characterization of carrier transport, and a discussion of the electronic band structures using a tight binding approach. This book succinctly compiles useful fundamental and practical information from one of the fastest growing research topics in materials science and is thus an essential compendium for both students and researchers in this rapidly moving field.

Nanomaterials are mainly categorized into three groups: fundamental building blocks, dispersions or composites of building blocks in randomly ordered matrices, and spatially resolved, ordered nanostructures. Today, nanomaterials that offer some unique optical properties may find application as pure materials or may be integrated into larger structures. This book presents examples of both pure and composite materials that include organic–inorganic nanocomposites and quantum dots embedded into different matrices for various applications in modern nanotechnology. This edition has been thoroughly revised and updated with the most recent developments in the field. The newly added introductory paragraphs will help students and young researchers in better understanding the chapters. The new sections on frequently used physical constants and units conversions as well as the updated bibliography add to the book's utility. This textbook is unique compared with its counterparts in the market in respect of its scope as it contains introductory sections to the important topics on nanomaterial optics. This feature broadens its readership from engineers and researchers working in the field of materials science and optics, to lecturers, graduate students, and beginners who want to deepen their knowledge in nanomaterial optics.

This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

The book bridges the gap between fundamental physics courses (such as optics, electrodynamics, quantum mechanics and solid state physics) and highly specialized literature on the spectroscopy, design, and application of optical thin film coatings. Basic knowledge from the above-mentioned courses is therefore presumed. Starting from fundamental physics, the book enables the reader derive the theory of optical coatings and to apply it to practically important spectroscopic problems. Both classical and semiclassical approaches are included. Examples describe the full range of classical optical coatings in various spectral regions as well as highly specialized new topics such as rugate filters and resonant grating waveguide structures. The second edition has been updated and extended with respect to probing matter in different spectral regions, homogenous and inhomogeneous line broadening mechanisms and the Fresnel formula for the effect of planar interfaces.

This book highlights the basics of crystal optics methods and refractive index (RI) measurement techniques in various solids, as well as their scientific and technological applications. In addition to new techniques for cases when traditional techniques are impractical, such as for highly refracting powders, anomalous dispersion of light in the studied solid, or for colloids, it also describes conventional methods of RI measurement.

This book displays how optical (absorption, emission, and magnetic circular dichroism) spectra of phthalocyanines and related macrocyclic dyes can be varied from their prototypical ones depending on conditions. As these compounds can be involved in colorful chemistry (which might be driven by impurities in solvents), their spectra behave like the sea-god Proteus in their mutability. Therefore, those who have been engaged with phthalocyanines for the first time, including even educated professional researchers and engineers, may have been embarrassed by the deceptive behavior of their compounds and could have, in the worst cases, given up their projects. This book is aimed not merely at reviewing the optical spectra, but also at helping such people, particularly beginners, to figure them out by showing some examples of their prototypical spectra and their variations in several situations. For the purpose of better understanding, the book also provides an introduction to their theoretical backgrounds as graphically as possible and without mathematicization for readers who are weak in mathematics.

Much of this book was written during a sabbatical visit by J. C. H. S. to the Max Planck Institute in Stuttgart during 1991. We are therefore grateful to Professors M. Ruhle and A. Seeger for acting as hosts during this time, and to the Alexander von Humbolt Foundation for the Senior Scientist Award which made this visit possible. The Ph. D. work of one of us (J. M. Z.) has also provided much of the background for the book, together with our recent papers with various collaborators. Of these, perhaps the most important stimulus to our work on convergent-beam electron diffraction resulted from a visit to the National Science Foundation's Electron Microscopy Facility at Arizona State University by Professor R. H(lJier in 1988, and from a return visit to Trondheim by J. C. H. S. in 1990. We are therefore particularly grateful to Professor H(lJier and his students and co-workers for their encouragement and collaboration. At ASU, we owe a particular debt of gratitude to Professor M. O'Keeffe for his encouragement. The depth of his under­ standing of crystal structures and his role as passionate skeptic have frequently been invaluable. Professor John Cowley has also been an invaluable sounding board for ideas, and was responsible for much of the experimental and theoretical work on coherent nanodiffraction. The sections on this topic derive mainly from collaborations by J. C. H. S. with him in the seventies.

This thesis combines highly accurate optical spectroscopy data on the recently discovered iron-based high-temperature superconductors with an incisive theoretical analysis. Three outstanding results are reported: (1) The superconductivity-induced modification of the far-infrared conductivity of an iron arsenide with minimal chemical disorder is quantitatively described by means of a strong-coupling theory for spin fluctuation mediated Cooper pairing. The formalism developed in this thesis also describes prior spectroscopic data on more disordered compounds. (2) The same materials exhibit a sharp superconductivity-induced anomaly for photon energies around 2.5 eV, two orders of magnitude larger than the superconducting energy gap. The author provides a qualitative interpretation of this unprecedented observation, which is based on the multiband nature of the superconducting state. (3) The thesis also develops a comprehensive description of a superconducting, yet optically transparent iron chalcogenide compound. The author shows that this highly unusual behavior can be explained as a result of the nanoscopic coexistence of insulating and superconducting phases, and he uses a combination of two complementary experimental methods - scanning near-field optical microscopy and low-energy muon spin rotation - to directly image the phase coexistence and quantitatively determine the phase composition. These data have important implications for the interpretation of data from other experimental probes.

Microcharacterization of materials is a rapidly advancing field. Among the many electron and ion probe techniques, the cathodoluminescence mode of an electron probe instrument has reached a certain maturity, which is reflected by an increas­ ing number of publications in this field. The rapid rate of progress in applications of cathodoluminescence techniques in characterizing inorganic solids has been especially noticeable in recent years. The main purpose of the book is to outline the applications of cath­ odoluminescence techniques in the assessment of optical and electronic proper­ ties of inorganic solids, such as semiconductors, phosphors, ceramics, and min­ erals. The assessment provides, for example, information on impurity levels derived from cathodoluminescence spectroscopy, analysis of dopant concentra­ tions at a level that, in some cases, is several orders of magnitude lower than that attainable by x-ray microanalysis, the mapping of defects, and the determination of carrier lifetimes and the charge carrier capture cross sections of impurities. In order to make the book self-contained, some basic concepts of solid-state phys­ ics, as well as various cathodoluminescence techniques and the processes leading to luminescence phenomena in inorganic solids, are also described. We hope that this book will be useful to both scientists and graduate students interested in microcharacterization of inorganic solids. This book, however, was not intended as a definitive account of cathodoluminescence analysis of in­ organic solids. In considering the results presented here, readers should re­ member that many materials have properties that vary widely as a function of preparation conditions.

Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.

Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.

Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those described in Vol. I, these sudies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described inchapters on scanning force microscopy, magnetic force microscopy, scanning near-field optical microscopy, together with a survey of other related techniques. Also described here is the use of a scanning proximal probe for surface modification. Togehter, the two volumes give a comprehensive account of experimental aspcets of STM. They provide essentialreading and reference material for all students and researchers involvedin this field.

Photophysics of Carbon Nanotubes Interfaced with Organic and Inorganic Materials describes physical, optical and spectroscopic properties of the emerging class of nanocomposites formed from carbon nanotubes (CNTs) interfacing with organic and inorganic materials. The three main chapters detail novel trends in photophysics related to the interaction of light with various carbon nanotube composites from relatively simple CNT/small molecule assemblies to complex hybrids such as CNT/Si and CNT/DNA nanostructures. The latest experimental results are followed up with detailed discussions and scientific and technological perspectives to provide a through coverage of major topics including:-Light harvesting, energy conversion, photoinduced charge separation and transport in CNT based nanohybrids-CNT/polymer composites exhibiting photoactuation; and-Optical spectroscopy and structure of CNT/DNA complexes. Including original data and a short review of recent research, Photophysics of Carbon Nanotubes Interfaced with Organic and Inorganic Materials makes this emerging field of photophysics and its applications available to academics and professionals working with carbon nanotube composites in fundamental and applied fields

The study of condensed matter using optical techniques, where photons act as both probe and signal, has a long history. It is only recently, however, that the extraction of surface and interface information, with submonolayer resolution, has been shown to be possible using optical techniques (where'optical'applies to electromagnetic radiation in and around the visible region of the spectrum). This book describes these'epioptic'techniques, which have now been quite widely applied to semiconductor surfaces and interfaces. Particular emphasis in the book is placed on recent studies of submonolayer growth on well-characterised semiconductor surfaces, many of which have arisen from CEC DGJGII ESPRIT Basic Research Action No. 3177'EPIOPTIC', and CEU DGIII ESPRIT Basic Research Action No. 6878'EASI'. Techniques using other areas of the spectrum such as the infra-red region (IR spectroscopy, in its various surface configurations), and the x-ray region (surface x-ray diffraction, x-ray standing wave), are omitted. The optical techniques described use simple lamp or small laser sources and are thus, in principle, easily accessible. Epioptic probes can provide new information on solid-gas, solid-liquid and liquid-liquid interfaces. They are particularly suited to growth monitoring. Emerging process technologies for fabricating submicron and nanoscale semiconductor devices and novel multilayer materials, whether based on silicon or compound semiconductors, all require extremely precise control of growth at surfaces. In situ, non-destructive, real-time monitoring and characterisation of surfaces under growth conditions is needed for further progress. Both atomic scale resolution, and non-destructive characterisation of buried structures, are required.

Knowledge of the refractive indices and absorption coefficients of semiconductors is especially important in the design and analysis of optical and photonic devices. This book presents data on the optical constants of various elemental and compound semiconductors. A complete set of the optical constants of the semiconductors are presented in tabular and graphical forms over the entire photon-energy range. They are: the complex dielectric constant ε(E)=ε1(E)+iε2(E), the complex refractive index n•(E)=n(E)+ik(E), the absorption coefficient α(E), and the normal-incidence reflectivity R(E). The book will aid many who are interested to know the optical constants of the elemental and compound semiconductors in the course of their work.

The book describes the basic principles that relate to field and current inhomogeneities in semiconductors and their kinetics that occur in the regime of negative differential conductances of semiconductors. The book presents the related theory and experiment. It proceeds to give for the first time the experimental methods to observe directly these inhomogeneities within the semiconductor. It analyses in detail the different ranges in which such inhomogeneities occur, when they are stationary and when not and what technical and device application result. The accompanying film on the website demonstrates all related kinetic effects. Information on these effects was previously mostly available indirectly by interpretation of current-voltage characteristics, or by point contact probing along the surface, or by changes in the luminescence spectrum. The material is based on the original papers of the research team of the author, starting in the late 50's and updated to incl. 2008.

Optical properties are among the most fascinating and useful properties of nanomaterials and have been extensively studied using a variety of optical spectroscopic techniques. A basic understanding of the optical properties and related spectroscopic techniques is essential for anyone who is interested in learning about nanomaterials of semiconductors, insulators or metal. This is partly because optical properties are intimately related to other properties and functionalities (e.g. electronic, magnetic, and thermal) that are of fundamental importance to many technological applications, such as energy conversion, chemical analysis, biomedicine, optoelectronics, communication, and radiation detection.Intentionally designed for upper-level undergraduate students and beginning graduate students with some basic knowledge of quantum mechanics, this book provides the first systematic coverage of optical properties and spectroscopic techniques of nanomaterials.

The book presents the current state of studies of point defects, both intrinsic and extrinsic (impurities, radiation centers, etc.), in LiNbO3. The contribution of intrinsic defects to photoinduced charge transport, i.e. to the photorefraction, is explained. The photorefractive and optical properties of LiNbO3 crystals with different stoichiometry and of those doped with so-called'optical-damage resistant'impurities controlling the intrinsic defect structure are described in detail. Applications included are to the problem of non-erasable recording of photorefractive holograms in LiNbO3 and the current situation of studies in the ferroelectric switching and domain structure of LiNbO3, as well as the creation of periodically-poled structures for the optical frequency conversion.

Nanoscale miniaturization and femtosecond laser-pulse spectroscopy require a quantum mechanical description of the carrier kinetics that goes beyond the conventional Boltzmann theory. On these extremely short length and time scales, the electrons behave as do partially coherent waves. This monograph deals with quantum kinetics for transport in low-dimensional microstructures and for ultra-short laser pulse spectroscopy. The nonequilibrium Green function theory is described and used for the derivation of the quantum kinetic equations. Numerical methods for the solution of the retarded quantum kinetic equations are discussed and results are presented for high-field transport and for mesoscopic transport phenomena. Quantum beats, polarization decay, and non-Markovian behaviour are treated for femtosecond spectroscopy on a microscopic basis. Since the publishing of the first edition in 1996, the nonequilibrium Green function technique has been applied to a large number of new research topics, and the revised edition introduces the reader to many of these areas, such as molecular electronics, noise calculations, build-up of screening and polaron correlations, and non-Markovian relaxation, among others. Connection to recent experiments is made, and it is emphasized how the quantum kinetic theory is essential in their interpretation.

Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

The second edition, which appeared in 2005 and contains substantial - dates and amendments compared to the?rst one and its corrected reprints, was again favourably received by the students and the scienti?c community worldwide. Asaconsequence,thepresentthirdeditionbecamenecessary.Thechanges introduced are, compared to the sedond edition, more limited, among others because the time elapsed between second and third edition is much shorter than the time between?rst and second one. The main chances concern the following points: The discussion about the density, at which an electron-holeplasma is formed, has been up-dated, in the section about photonic crystals a few comments on meta-materials have been added, several new and timely references have been included and some of the misprints have been removed. Karlsruhe, C.F. Klingshirn August 2006 Preface to the Second Edition The book on Semiconductor Optics has been favourably received by the s- dents and the scienti?c community worldwide. After the?rst edition, which appeared in 1995 several reprints became necessary starting from 1997, one of them for the Chinese market. They contained only rather limited updates of the material and corrections. In the meantime scienti?c progress brought a lot of new results, which necessitate a new, seriously revised edition. This progress includes bulk se- conductors, but especially structures of reduced dimensionality. These new trends and results are partly included in existing chapters e.g. for phonons or for time-resolved spectroscopy, partly new chapters have been introduced like the ones on cavity polaritons and photonic structures.

Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.

Since the first edition of'Scanning'funneling Microscopy I'has been pub­ lished, considerable progress has been made in the application of STM to the various classes of materials treated in this volume, most notably in the field of adsorbates and molecular systems. An update of the most recent develop­ ments will be given in an additional Chapter 9. The editors would like to thank all the contributors who have supplied up­ dating material, and those who have provided us with suggestions for further improvements. We also thank Springer-Verlag for the decision to publish this second edition in paperback, thereby making this book affordable for an even wider circle of readers. Hamburg, July 1994 R. Wiesendanger Preface to the First Edition Since its invention in 1981 by G. Binnig, H. Rohrer and coworkers at the IBM Zurich Research Laboratory, scanning tunneling microscopy (STM) has devel­ oped into an invaluable surface analytical technique allowing the investigation of real-space surface structures at the atomic level. The conceptual simplicity of the STM technique is startling: bringing a sharp needle to within a few Angstroms of the surface of a conducting sample and using the tunneling cur­ rent, which flows on application of a bias voltage, to sense the atomic and elec­ tronic surface structure with atomic resolution! Prior to 1981 considerable scepticism existed as to the practicability of this approach.

Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and the broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those in STM I, these studies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described in chapters on scanning force microscopy, magnetic force microscopy, and scanning near-field optical microscopy, together with a survey of other related techniques. Also discussed here is the use of a scanning proximal probe for surface modification. Together, the two volumes give a comprehensive account of experimental aspects of STM and provide essential reading and reference material. In this second edition the text has been updated and new methods are discussed.

The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.