Search

This book focuses on chemical reactions and processing under extreme conditions—how materials react with highly concentrated active species and/or in a very confined high-temperature and high-pressure volume. Those ultimate reaction environments created by a focused laser beam, discharges, ion bombardments, or microwaves provide characteristic nano- and submicron-sized products and functional nanostructures. The book explores the chemistry and processing of metals and non-metals as well as molecules that are strongly dependent on the energy deposition processes and character of the materials. Descriptions of a wide range of topics are given from the perspective of a variety of research methodologies, material preparations, and applications. The reader is led to consider and review how a high-energy source interacts with materials, and what the key factors are that determine the quality and quantity of nanoproducts and nano-processing.

This book discusses various aspects of different bulk TSO single crystals in terms of thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution, and melt; and the resulting crystal size, appearance, and structural quality as well as the fundamental properties that were gathered from bulk single crystals. It presents experimental results accompanied by theoretical results, such as band structure and native defects. Combinations of various bulk single crystals along with their properties show great promise in practical device functionality and fabrication. Many TSO-based devices have already been demonstrated in several technical areas, including electronics, optoelectronics, and photovoltaics as well as sensing devices. The book is the first of its kind that brings together a variety of bulk single crystals of scientifically and technically important TSOs along with their properties, which may result in novel devices with unique functionalities.

This is an agenda-setting and high-profile book that presents an authoritative and cutting-edge analysis of nanoscience and technology. The Oxford Handbook of Nanoscience and Technology provides a comprehensive and accessible overview of the major achievements in different aspects of this field. The Handbook comprises 3 volumes, structured thematically, with 25 chapters each. Volume I presents fundamental issues of basic physics, chemistry, biochemistry, tribology etc. of nanomaterials. Volume II focuses on the progress made with host of nanomaterials including DNA and protein based nanostructures. Volume III highlights engineering and related developments, with a focus on frontal application areas. All chapters are written by noted international experts in the field. The book should be useful for final year undergraduates specializing in the field. It should prove indispensable to graduate students, and serious researchers from academic and industrial sectors working in the field of Nanoscience and Technology from different disciplines including Physics, Chemistry, Biochemistry, Biotechnology, Medicine, Materials Science, Metallurgy, Ceramics, Information Technology as well as Electrical, Electronic and Computational Engineering.

Introduction to Crystal Growth: Principles and Practice teaches readers about crystals and their origins. It offers a historical perspective of the subject and includes background information whenever possible.The first section of this introductory book takes readers through the historical development and motivation of the field of crystal growth.

Volume I - Fundamentals addresses the underlying scientific principles relevant to all the techniques of crystal growth. Following a Foreword by Professor Sir Charles Frank and an historical introduction, the first part contains eight chapters devoted to thermodynamic, kinetic and crystallographic aspects including computer simulation by molecular dynamics and Monte Carlo methods. The second part, comprising a further seven chapters, is devoted to bulk transport effects and the influence of transport-limited growth on the stability of both isolated growth forms (such as the dendrite) and arrays, and on the cooperative effects which lead to pattern formation. All the presentations are superbly authoritative.

These volumes contain 365 of the 505 papers presented at the VUV-11 Conference, held at Rikkyo University, Tokyo, from August 27th to September 1st 1995. The papers are divided into three sections: atomic and molecular spectroscopy, solid state spectroscopy and instrumentation and technological applications. New aspects presented were both quantitative and qualitative improvements in fluorescence spectroscopy and magnetic circular dichroism measurements. The fluorescence data are complementary to those of photoemission in a sense but they appear to open up a new method to analyze the optical excitation and relaxation processes. The application of magnetic circular dichroism has proved to be useful not only in analyzing the electronic structures of magnetic materials but also in practical applications to material engineering as found in experiments combined with photoelectron microscopy. Excellent developments in applications are only found in the field of surface photochemistry, where the technique of etching using VUV light has been appreciably refined.Although the majority of distinctive scientific features in the VUV-11 Conference have been brought about by the application of synchrotron radiation, experiments using a different type of light source appear to have progressed steadily. This is evident in the studies of plasma radiation.

Synthesis, Crystal Growth and Characterization presents the proceedings of the International School on Synthesis, Crystal Growth and Characterization of Materials for Energy Conversion and Storage, held on October 12-23, 1981, at the National Physical Laboratory in New Delhi, India. The book consists of lectures by distinguished scientists from around the world who tackle different aspects of synthesis, crystal growth, characterization of materials, energy conversion, and energy storage. Organized into four parts encompassing 26 chapters, the book begins with an overview of the synthesis of materials at high temperatures and pressures before turning to a discussion of how macrocrystalline and amorphous silicon is prepared. It then looks at fundamental principles underlying the process of crystal growth, both from the vapor phase and from melt, and methodically introduces the reader to the different techniques used to characterize materials, including neutron scattering and electron transport. The next chapters focus on point defects and aggregates that influence the critical electronic properties of semiconducting materials, X-ray diffraction studies of strains and stresses in thin films used in solid-state devices, and electron spectroscopic studies of solid surfaces. The book also considers the role of physics in microelectronics and vice versa, fast ion transport in solids, and the concept of Syadvada in relation to modern physics. This volume is a valuable resource for participants of the International School on Synthesis, Crystal Growth and Characterization of Materials for Energy Conversion and Storage, as well as active researchers working in areas related to the field.

Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.