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This book discusses various aspects of different bulk TSO single crystals in terms of thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution, and melt; and the resulting crystal size, appearance, and structural quality as well as the fundamental properties that were gathered from bulk single crystals. It presents experimental results accompanied by theoretical results, such as band structure and native defects. Combinations of various bulk single crystals along with their properties show great promise in practical device functionality and fabrication. Many TSO-based devices have already been demonstrated in several technical areas, including electronics, optoelectronics, and photovoltaics as well as sensing devices. The book is the first of its kind that brings together a variety of bulk single crystals of scientifically and technically important TSOs along with their properties, which may result in novel devices with unique functionalities.

This book walks you through the fundamental deformation and damage mechanisms. It lends the reader the key to open the doors into the maze of deformation/fracture phenomena under various loading conditions. Furthermore it provides the solution method to material engineering design and analysis problems, for those working in the aerospace, automotive or energy industries. The book introduces the integrated creep-fatigue theory (ICFT) that considers holistic damage evolution from surface/subsurface crack nucleation to propagation in coalescence with internally-distributed damage/discontinuities.

Intermetallic compounds are in the focus of solid-state research for a wide range of future applications, e.g. in heterogeneous catalysis, for thermoelectric generators, and basic research of quantum critical effects. A comprehensive overview is given on various crystal growth techniques that are particularly adopted to intermetallic phases. Experienced authors from leading institutes give detailed descriptions of the specific problems in crystal growth of intermetallic compounds and approaches to solve them.

Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemical

Introduction to Crystal Growth: Principles and Practice teaches readers about crystals and their origins. It offers a historical perspective of the subject and includes background information whenever possible.The first section of this introductory book takes readers through the historical development and motivation of the field of crystal growth.

Crystal Growth, Second Edition deals with crystal growth methods and the relationships between them. The chemical physics of crystal growth is discussed, along with solid growth techniques such as annealing, sintering, and hot pressing; melt growth techniques such as normal freezing, cooled seed method, crystal pulling, and zone melting; solution growth methods; and vapor phase growth. This book is comprised of 15 chapters and opens with a bibliography of books and source material, highlighted by a classification of crystal growth techniques. The following chapters focus on the molecular state of a crystal when in equilibrium with respect to growth or dissolution; the fundamentals of classical and modern hydrodynamics as applied to crystal growth processes; creation, control, and measurement of the environment in which a crystal with desired properties can grow; and growth processes where transport occurs through the vapor phase. The reader is also introduced to crystal growth with molecular beam epitaxy; crystal pulling as a crystal growth method; and zone refining and its applications. This monograph will be of interest to physicists and crystallographers.

Despite the fact that crystals make up an estimated 80% of chemical and pharmaceutical products, few resources exist that provide practical guidance on achieving precision control of their size and size distribution. Based on a model developed by the author and his colleagues, Precision Crystallization: Theory and Practice of Controlling Crystal Si

For much of the past 60 years, the U.S. research community dominated the discovery of new crystalline materials and the growth of large single crystals, placing the country at the forefront of fundamental advances in condensed-matter sciences and fueling the development of many of the new technologies at the core of U.S. economic growth. The opportunities offered by future developments in this field remain as promising as the achievements of the past. However, the past 20 years have seen a substantial deterioration in the United States'capability to pursue those opportunities at a time when several European and Asian countries have significantly increased investments in developing their own capacities in these areas. This book seeks both to set out the challenges and opportunities facing those who discover new crystalline materials and grow large crystals and to chart a way for the United States to reinvigorate its efforts and thereby return to a position of leadership in this field.

This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: • General aspects of crystal growth technology • Silicon • Compound semiconductors • Oxides and halides • Crystal machining • Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.

Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

Designed both for experimentalists who study rough surfaces and the dynamics of thin film growth using diffraction techniques and for theorists who wish to learn of such rough surfaces and dynamic behavior in Fourier space, this monograph quickly brings the readers to forefront research in the area of the dynamics of interface growth. Graduate and advanced undergraduate students as well as those readers who have very little prior knowledge of diffraction can pick up the subject matter with little difficulty.This monograph gives a brief review and summary at the end of each chapter. After the introduction of the elementary theory of diffraction in Chapter I, Chapter II discusses the various parameters and correlation functions that are essential in describing a rough surface. In Chapter III, the authors not only show analytical forms of the diffraction structure factor for both rough crystalline and non-crystalline surfaces, but also outline the methods of extracting the interface width, the lateral correlation length and the roughness parameter from the diffraction structure factor. To present the basic physical concepts underlying the scaling hypothesis during dynamic growth, in Chapter IV, a detailed description of the dynamic scaling properties of the height-height correlation function, the height difference function and the structure factor is given. The structure factor from a dynamic growth front is derived in Chapter V. An example of a quantitative measurement of the dynamic growth front of an epitaxial system is also given in this chapter. In Chapter VI, a particular type of rough surfaces having a diverging interface width associated with an equilibrium surface roughening transition is discussed. A comparison of the diffraction characteristics from divergent and non-divergent interface is also summarized.

Volume I - Fundamentals addresses the underlying scientific principles relevant to all the techniques of crystal growth. Following a Foreword by Professor Sir Charles Frank and an historical introduction, the first part contains eight chapters devoted to thermodynamic, kinetic and crystallographic aspects including computer simulation by molecular dynamics and Monte Carlo methods. The second part, comprising a further seven chapters, is devoted to bulk transport effects and the influence of transport-limited growth on the stability of both isolated growth forms (such as the dendrite) and arrays, and on the cooperative effects which lead to pattern formation. All the presentations are superbly authoritative.

Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial interfaces and on ways of reducing transition regions in films and film-type devices, on the processes of crystallization and recrystallization of amorphous films, and on thermodynamic conditions, mechanisms and kinetic parameters of accelerated crystallization.

Thin Films from Free Atoms and Particles is an eight-chapter text that describes the primary reaction modes of atoms or coordination-deficient particles. This book presents first an introduction to free atoms and particles, followed by a chapter describing the embryonic growth of films, such as dimers, trimers, and other small telomers formed and detected. The next chapters discuss the understanding of discharge processes for forming free atoms and particles. The remaining chapters deal with the technology, techniques, and materials in thin films. Physicists, engineers, materials scientists, and chemists will find this book of great value.

The KDP family of single crystals is composed of compounds of alkali metals with light or heavy (hydro, deutero) water and oxides of phosphate or arsenate, including ammonium, potassium, rubidium and caesium dihydro- and dideutero-phosphates, and similar arsenates. While not occurring in nature, their production exceeds that of any other water-soluble crystals and the demand for bigger and more optically pure crystals is ever increasing. KDP-Family Single Crystals is a comprehensive investigation of the crystallization mechanism for these systems. The first part of the book collects the majority of the available data on the physico-chemical analysis of these systems. This is complemented by a review of contemporary concepts related to the crystal growth dislocation mechanism under the influence of impurities, changing supersaturation, and temperature. This is not only relevant to the growth of KDP single crystals but to the majority of crystals grown from low- and high-temperature solutions. Finally, attention is given to the important problem of speeding up the production processes for the growth of these crystals while maintaining the quality of the crystals. The in-depth coverage that KDP-Family Single Crystals provides to the art of crystal growth techniques makes it an essential reference work for all those working in the field of crystal growth and to those using KDP-family crystals in quantum electronics devices.

This book gives a systematic overview on the scientific fundamentals of crystal growth from the classical phenomenological description to the recent theoretical contributions of statistical physics such as studies on surface roughening and on the pattern formation in the diffusion-limited growth.The book emphasizes physical concepts as well as mathematical details, and is intended to serve as lecture notes for postgraduate courses.