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Despite a long tradition of sophisticated, creative materials synthesis among quantum materials researchers, a sense of broader community has been lacking. In initiating the Fundamentals of Quantum Materials Winter School held annually at the University of Maryland, we wanted to bring together the next generation of growers to learn techniques and pointers directly from senior scientists, and it turns out that we were not alone. The enthusiasm from both students and teachers has been both gratifying and invigorating. Four schools later, we can confidently say that physicists, chemists, and materials scientists, experimentalists and theorists alike, all want to know how to make a good sample. With this in mind, we asked our lecturers to record their most important ideas and share their expertise with a broader audience. This resource is a compilation of fundamental and practical guides on the modern methods of materials synthesis utilized by these experts. We hope that you enjoy reading their essential guidance and state-of-the-art techniques as you explore the Fundamentals of Quantum Materials.

Intermetallic compounds are in the focus of solid-state research for a wide range of future applications, e.g. in heterogeneous catalysis, for thermoelectric generators, and basic research of quantum critical effects. A comprehensive overview is given on various crystal growth techniques that are particularly adopted to intermetallic phases. Experienced authors from leading institutes give detailed descriptions of the specific problems in crystal growth of intermetallic compounds and approaches to solve them.

This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films. KNbO3 (KN) thin films have been extensively investigated for applications in nonlinear optical, electro-optical and piezoelectric devices. However, the electrical properties of KN films have not yet been reported, because it is difficult to grow stoichiometric KN thin films due to K2O evaporation during growth. This thesis also reports on the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator, and finally shows the biological synaptic properties of the KN memristor for application to the artificial synapse of a neuromorphic computing system.

This comprehensive work explores interfacial instability and pattern formation in dynamic systems away from the equilibrium state in solidification and crystal growth. Further, this significantly expanded 2nd edition introduces and reviews the progress made during the last two decades. In particular, it describes the most prominent pattern formation phenomena commonly observed in material processing and crystal growth in the framework of the previously established interfacial wave theory, including free dendritic growth from undercooled melt, cellular growth and eutectic growth in directional solidification, as well as viscous fingering in Hele-Shaw flow. It elucidates the key problems, systematically derives their mathematical solutions by pursuing a unified, asymptotic approach, and finally carefully examines these results by comparing them with the available experimental results.The asymptotic approach described here will be useful for the investigation of pattern formation phenomena occurring in a much broader class of inhomogeneous dynamical systems. In addition, the results on global stability and selection mechanisms of pattern formation will be of particular interest to researchers working on material processing and crystal growth. The stability mechanisms of a curved front and the pattern formation have been fundamental subjects in the areas of condensed-matter physics, materials science, crystal growth, and fluid mechanics for some time now. This book offers a stimulating and insightful introduction for all physicists, engineers and applied mathematicians working in the fields of soft condensed-matter physics, materials science, mechanical and chemical engineering, fluid dynamics, and nonlinear sciences.

In this volume, contributions covering the theoretical and practical aspects of multicomponent crystals provide a timely and contemporary overview of the state-of-the art of this vital aspect of crystal engineering/materials science. With a solid foundation in fundamentals, multi-component crystals can be formed, for example, to enhance pharmaceutical properties of drugs, for the specific control of optical responses to external stimuli and to assemble molecules to allow chemical reactions that are generally intractable following conventional methods. ContentsPharmaceutical co-crystals: crystal engineering and applicationsPharmaceutical multi-component crystals: improving the efficacy of anti-tuberculous agentsQualitative and quantitative crystal engineering of multi-functional co-crystalsControl of photochromism in N-salicylideneaniline by crystal engineeringQuinoline derivatives for multi-component crystals: principles and applicationsN-oxides in multi-component crystals and in bottom-up synthesis and applicationsMulti-component crystals and non-ambient conditionsCo-crystals for solid-state reactivity and thermal expansionSolution co-crystallisation and its applicationsThe salt-co-crystal continuum in halogen-bonded systemsLarge horizontal displacements of benzene-benzene stacking interactions in co-crystalsSimultaneous halogen and hydrogen bonding to carbonyl and thiocarbonylfunctionalityCrystal chemistry of the isomeric N,N'-bis(pyridin-n-ylmethyl)-ethanediamides, n = 2, 3 or 4Solute・solvent interactions mediated by main group element (lone-pair)・・・π(aryl) interactions

Natalija van Well fokussiert in ihrer Studie auf die Kristallzüchtung mit unterschiedlichen Parametern und die Charakterisierung der Kristalle des Mischsystems Cs2CuCl4–xBrx. Durch Synthese, Züchtung und Charakterisierung von solchen Materialien werden Erkenntnisse über die Systematik der Veränderung ihrer physikalischen Eigenschaften gewonnen. Als Ergebnis bestimmt die Autorin neue schematische Phasendiagramme und charakterisiert neu entdeckte Zusammensetzungen. Magnetische Eigenschaften der Materialien können z.B. durch die Änderung der Abstände zwischen den wechselwirkenden Einheiten beeinflusst werden. ;sans-serif';mso-ascii-theme-font: minor-latin;mso-hansi-theme-font:minor-latin'>

'The book is well organized and is pedagogical. By discussing crystallization in pure systems, the author introduces and describes the important concepts, physical parameters and theoretical models pertaining to nucleation and growth of crystals … If you are a young investigator or a graduate student whose research involves understanding the fundamentals of crystallization including nucleation and growth, this book will be a treat for you. Readers who have a strong background in physical chemistry or thermal physics may find the book easy to read. Nevertheless, this book should be a good reference to have on the bookshelf if you are an experienced researcher whose interest crosses the path with the general topics of crystal growth.'Acta Crystallographica Section BThe processes of new phase formation and growth are of fundamental importance in numerous rapidly developing scientific fields such as modern materials science, micro- and optoelectronics, and environmental science. Crystal Growth for Beginners combines the depth of information in monographs, with the thorough analysis of review papers, and presents the resulting content at a level understandable by beginners in science. The book covers, in practice, all fundamental questions and aspects of nucleation, crystal growth, and epitaxy.This book is a non-eclectic presentation of this interdisciplinary topic in materials science. The third edition brings existing chapters up to date, and includes new chapters on the growth of nanowires by the vapor-liquid-solid mechanism, as well as illustrated short biographical texts about the scientists who introduced the basic ideas and concepts into the fields of nucleation, crystal growth and epitaxy. All formulae and equations are illustrated by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject.Crystal Growth for Beginners is a valuable reference for both graduate students and researchers in materials science. The reader is required to possess some basic knowledge of mathematics, physics and thermodynamics.

The monograph'Shaped Crystal Growth'by V. A. Tatarchenko is the first systematic of the macroscopic crystallization theory. The theory is based on the stable­ statement growth conception, which means that self-stabilization is present in the system, with growth parameter deviations occurring under the action of external perturbations attenuating with time. The crystallization rate is one of the parameters responsible for crystal defect formation. Steady-state crystal growth means that crystallization­ rate internal stabilization is present, thus allowing more perfect crystals to grow. Most important is the fact that the crystal shape (an easily observed parameter) is one of the stable-growth characteristics when growing crystals without any contact with the crucible walls. This means that constant-cross-section crystal growth is to a certain extent evidence of crystallization process stability. The principles of the stable crystal growth theory were developed by the author of the monograph in the early 1970s. Due to the efforts over the past 20 years of V. A. Tatarchenko, his disciples (V. A. Borodin, S. K. Brantov, E. A. Brener, G. I. Romanova, G. A. Satunkin et al) and his followers (B. L. Timan, 0. V. Kolotiy et al) the theory has been completed, which is demonstrated by this monograph. The characteristic feature of the theory is its trend towards solving practical problems that occur in the process of crystal growth.

Crystal growth and nucleation are treated in the specialized literature in different ways depending on the discipline in question (physics, physical chemistry, chemical engineering) and on the theoretical approaches (atomistic vs continuum approach as regards crystal growth, phase vs chemical concept as regards nucleation). This book relates the different approaches to one another, giving preference to atomistic treatments by the methods of statistical thermodynamics and chemical kinetics. This unified approach also facilitates an understanding of some related phenomena of surface physics, such as adsorption, wetting etc. The book allows research novices and graduate students to get an insight into the physics of the phenomena and to interpret some of the experimental results.

Crystal pulling is an industrial process and provides the bulk of semiconductor crystals for the semiconductor industry. Initially a purely empirical process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attempt to strengthen the interface between the practical crystal grower and the applied mathematician involved in analytical and computer modelling. Its focus is on the physics, chemistry and metallurgy of the process. From reviews:'... There is a need for a modern, non-trivial text on Czochralski growth... and Dr. Hurle is eminently suited to write such a text.';'Dr. Hurle is probably uniquely qualified to write a book on... (the Czochralski) growth process.... He has published a great deal of very substantial as well as innovative work in this area.'

The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade. In particular, the dramatic improvement of the structural quality of semiconductor epilayers and heterostructures results to a great deal from the level of sophistication achieved with such analysis techniques. First of all, optical techniques are nondestructive and their sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses on the atomic scale. Furthermore, the spatial and temporal resolution have been pushed to such limits that real time observation of surface processes during epitaxial growth is possible with techniques like reflectance difference spectroscopy. Of course, optical spectroscopies complement techniques based on the inter­ action of electrons with matter, but whereas the latter usually require high or ultrahigh vacuum conditions, the former ones can be applied in different environments as well. This advantage could turn out extremely important for a rather technological point of view, i.e. for the surveillance of modern semiconductor processes. Despite the large potential of techniques based on the interaction of electromagnetic waves with surfaces and epilayers, optical techniques are apparently moving only slowly into this area of technology. One reason for this might be that some prejudices still exist regarding their sensitivity.

This book presents the state of the art in nanoscale surface physics. It outlines contemporary trends in the field covering a wide range of topical areas: atomic structure of surfaces and interfaces, molecular films and polymer adsorption, biologically inspired nanophysics, surface design and pattern formation, and computer modeling of interfacial phenomena. Bridging'classical'and'nano'concepts, the present volume brings attention to the physical background of exotic condensed-matter properties. The book is devoted to Iwan Stranski and Rostislaw Kaischew, remarkable scientists, who played a crucial role in setting up the theoretical fundamentals of nucleation and crystal growth phenomena in the last century.

A review of recent advancements in colloidal nanocrystals and quantum-confined nanostructures, Nanocrystal Quantum Dots is the second edition of Semiconductor and Metal Nanocrystals: Synthesis and Electronic and Optical Properties, originally published in 2003. This new title reflects the book's altered focus on semiconductor nanocrystals. Gathering contributions from leading researchers, this book contains new chapters on carrier multiplication (generation of multiexcitons by single photons), doping of semiconductor nanocrystals, and applications of nanocrystals in biology. Other updates include: New insights regarding the underlying mechanisms supporting colloidal nanocrystal growth A revised general overview of multiexciton phenomena, including spectral and dynamical signatures of multiexcitons in transient absorption and photoluminescence Analysis of nanocrystal-specific features of multiexciton recombination A review of the status of new field of carrier multiplication Expanded coverage of theory, covering the regime of high-charge densities New results on quantum dots of lead chalcogenides, with a focus studies of carrier multiplication and the latest results regarding Schottky junction solar cells Presents useful examples to illustrate applications of nanocrystals in biological labeling, imaging, and diagnosticsThe book also includes a review of recent progress made in biological applications of colloidal nanocrystals, as well as a comparative analysis of the advantages and limitations of techniques for preparing biocompatible quantum dots. The authors summarize the latest developments in the synthesis and understanding of magnetically doped semiconductor nanocrystals, and they present a detailed discussion of issues related to the synthesis, magneto-optics, and photoluminescence of doped colloidal nanocrystals as well. A valuable addition to the pantheon of literature in the field of nanoscience, this book presents pioneering research from experts whose work has led to the numerous advances of the past several years.

This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.

Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Convective flow in the liquid phase is always present in a realistic process of freezing and melting and may significantly affect the dynamics and results of the process. The study of the interplay of growth and convection flow during the solidification has been an important subject in the broad fields of materials science, condensed matter physics, fluid physics, micro-gravity science, etc. The present book is concerned with the dynamics of free dendritic growth with convective flow in the melt. It systematically presents the results obtained in terms of a unified asymptotic approach in the framework of the interfacial wave (IFW) theory. In particular, the book explores the effect of the various types of convection flow on the selection and pattern formation of dendritic growth based on the global stability analysis.

Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-Tc superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.

Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

Thin Films from Free Atoms and Particles is an eight-chapter text that describes the primary reaction modes of atoms or coordination-deficient particles. This book presents first an introduction to free atoms and particles, followed by a chapter describing the embryonic growth of films, such as dimers, trimers, and other small telomers formed and detected. The next chapters discuss the understanding of discharge processes for forming free atoms and particles. The remaining chapters deal with the technology, techniques, and materials in thin films. Physicists, engineers, materials scientists, and chemists will find this book of great value.

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

This book gives a systematic overview on the scientific fundamentals of crystal growth from the classical phenomenological description to the recent theoretical contributions of statistical physics such as studies on surface roughening and on the pattern formation in the diffusion-limited growth.The book emphasizes physical concepts as well as mathematical details, and is intended to serve as lecture notes for postgraduate courses.