1. General physical studies on semiconductors using a scanning electron microscope
- Author
-
De Monts de Savasse, G.A.C. Jones, and A. Gopinath
- Subjects
Materials science ,Scanning electron microscope ,Cathodoluminescence ,semiconductors ,02 engineering and technology ,epitaxial layers ,01 natural sciences ,law.invention ,Optics ,law ,0103 physical sciences ,Scanning transmission electron microscopy ,electron microscope examination of materials ,Environmental scanning electron microscope ,010302 applied physics ,Conventional transmission electron microscope ,electron microscopy ,business.industry ,Gunn devices ,GaAs ,InP ,Scanning confocal electron microscopy ,cathodoluminescence ,scanning electron microscope ,021001 nanoscience & nanotechnology ,gallium arsenide ,Electrochemical scanning tunneling microscope ,indium compounds ,cathodoluminescence mode ,beam induced conductive mode ,[PHYS.HIST]Physics [physics]/Physics archives ,III V semiconductors ,physical studies ,Optoelectronics ,Electron microscope ,techniques ,0210 nano-technology ,business - Abstract
The beam-induced conductive-mode and cathodoluminescence mode have been used in the study of GaAs and InP epitaxial layers and Gunn devices. The paper outlines the techniques used.
- Published
- 1974