1. Flexible graphene field effect transistor with ferroelectric polymer gate
- Author
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Hai Huang, Hong Shen, Shuo Sun, Tie Lin, Jinglan Sun, Junhao Chu, Xudong Wang, Minghua Tang, Jianlu Wang, Bobo Tian, Xiaolin Zhao, Guangjian Wu, Yan Chen, and Xiangjian Meng
- Subjects
Materials science ,business.industry ,Graphene ,Gate dielectric ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Ferroelectricity ,Atomic and Molecular Physics, and Optics ,Flexible electronics ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,0103 physical sciences ,Optoelectronics ,Electrical and Electronic Engineering ,010306 general physics ,0210 nano-technology ,business ,Layer (electronics) ,Graphene nanoribbons ,Graphene oxide paper - Abstract
A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.
- Published
- 2016